? 2004 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 300 a v ge = 0 v t j = 125 c 5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 50 a, v ge = 15 v 2.0 v note 1 symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c47a i cm t c = 25 c, 1 ms 300 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 150 a (rbsoa) clamped inductive load @ v ce 600 v p c t c = 25 c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms, t = 1m 2500 v weight 5g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s g = gate c = collector e = emitter ds99161(04/04) v ces = 600 v i c25 = 75 a v ce(sat) = 2.0 v t fi(typ) = 100 ns advance technical data hiperfast tm igbt isoplus247 tm c2-class high speed igbts (electrically isolated back surface) ixgr 60n60b2 ixgr 60n60b2d1 plus247(ixgr) (isolated tab) features z dcb isolated mounting tab z meets to-247ad package outline z high current handling capability z latest generation hdmos tm process z mos gate turn-on - drive simplicity applications z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z easy assembly z high power density z very fast switching speeds for high frequency applications e153432 c e d1
ixys reserves the right to change limits, test conditions, and dimensions. ixgr 60n60b2 ixgr 60n60b2d1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 50 a; v ce = 10 v, 40 58 s note 1 c ies 3900 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 340 pf c res 100 pf q g 170 nc q ge i c = 50 a, v ge = 15 v, v ce = 0.5 v ces 25 nc q gc 57 nc t d(on) 28 ns t ri 30 ns t d(off) 160 270 ns t fi 100 170 ns e off 1.0 2.5 mj t d(on) 28 ns t ri 36 ns e on 1.5 mj t d(off) 310 ns t fi 240 ns e off 2.8 mj r thjc 0.5 k/w r thck 0.15 k/w inductive load, t j = 25 c i c = 50 a, v ge = 15 v v ce = 400 v, r g = r off = 3.3 ? inductive load, t j = 125 c i c = 50 a, v ge = 15 v v ce = 400 v, r g = r off = 2.0 ? reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 60 a, v ge = 0 v, 2.1 v note 1 t j = 150 c 1.4 v i rm i f = 60 a, v ge = 0 v, -di f /dt = 100 a/ t j = 100 c 8.3 a v r = 100 v t rr i f = 1 a; -di/dt = 200 a/ms; v r = 30 v 35 n s r thjc 0.85 k/w note 1: pulse test, t 300 s, duty cycle 2 % isoplus 247 outline ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344
? 2004 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 50 100 150 200 250 300 350 012345678 v c e - volts i c - amperes v ge = 15v 13v 5v 7v 9v 11v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 90 100 0.511.5 22.53 v ce - volts i c - amperes v ge = 15v 13v 11v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 90 100 0.511.5 22.53 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degr ees centigr ade v c e (s at) - normalized i c = 50a i c = 25a v ge = 15v i c = 100a fig. 5. collector-to-em itter voltage vs. gate-to-em itter voltage 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 5 6 7 8 9 10 11 12 13 14 15 16 17 v g e - volts v c e - volts t j = 25oc i c = 100a 50a 25a fig. 6. input admittance 0 50 100 150 200 250 300 456 78910 v g e - volts i c - amperes t j = 125oc -40oc t j = 25oc ixgr 60n60b2 ixgr 60n60b2d1
ixys reserves the right to change limits, test conditions, and dimensions. ixgr 60n60b2 ixgr 60n60b2d1 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 250 300 i c - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. dependence of turn-off energy on r g 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 r g - ohms e off - millijoules i c = 25a t j = 125oc v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 9. dependence of turn-off en e r g y on i c 0 1 2 3 4 5 6 7 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules r g = 3.3 ? v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 10. dependence of turn-off energy on temperature 0 1 2 3 4 5 6 7 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules i c = 100a r g = 3.3 ? v ge = 15v v ce = 400v i c = 50a i c = 25a fig. 11. dependence of turn-off sw itching time on r g 200 300 400 500 600 700 800 900 1000 1100 1200 0 5 10 15 20 25 30 35 40 45 50 r g - ohms switching time - nanosecond i c = 50a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 400v i c = 25a i c = 100a fig. 12. dependence of turn-off sw itching time on i c 50 100 150 200 250 300 350 400 20 30 40 50 60 70 80 90 100 i c - amperes switching time - nanosecond t d(off) t fi - - - - - - r g = 3.3 ? v ge = 15v v ce = 400v t j = 125oc t j = 25oc
? 2004 ixys all rights reserved ixgr 60n60b2 ixgr 60n60b2d1 fig. 14. gate charge 0 3 6 9 12 15 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v ge - volts v ce = 300v i c = 50a i g = 10ma fig. 15. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanosecond i c = 25a 50a 100a t d(off) t fi - - - - - - r g = 3.3 ? v ge = 15v v ce = 400v i c = 100a 50a 25a fig. 13. maximum transient thermal resistance 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
ixys reserves the right to change limits, test conditions, and dimensions. ixgr 60n60b2 ixgr 60n60b2d1 200 600 1000 0 400 800 80 90 100 110 120 130 140 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.4 0.8 1.2 1.6 v fr di f /dt v 200 600 1000 0 400 800 0 20 40 60 80 100 1000 0 1000 2000 3000 4000 012 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr a/ s s dsep 2x61-06a z thjc i f =120a i f = 60a i f = 30a t vj = 100c v r = 300v t vj = 100c i f = 60a fig. 19. peak reverse current i rm versus -di f /dt fig. 18. reverse recovery charge q r versus -di f /dt fig. 17. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f =120a i f = 60a i f = 30a q r i rm fig. 20. dynamic parameters q r , i rm versus t vj fig. 21. recovery time t rr versus -di f /dt fig. 22. peak forward voltage v fr and t fr versus di f /dt i f =120a i f = 60a i f = 30a t fr v fr fig. 23. transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.3073 0.0055 2 0.3533 0.0092 3 0.0887 0.0007 4 0.1008 0.0399 t vj = 25c t vj =150c t vj =100c
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